Molecular beam epitaxial growth of doped oxide semiconductors.

Molecular beam epitaxy coupled with the use of activated oxygen is shown to be a powerful tool for the growth of well-defined, structurally excellent oxide semiconductor films. The basics of the methodology are discussed. Several case studies are presented to illustrate some of the physical phenomena that can be investigated; these include Cr- and Co-doped TiO(2) anatase, Ti-doped α-Fe(2)O(3) hematite, and N-doped TiO(2) rutile.